Role of deep-level centers in compensated semi-insulating GaAs

Requirements are defined for GaAs materials intended for solid-state detectors of ionizing radiation. A model is proposed to ascertain the role of deep-level centers in compensated semi-insulating GaAs. The model consists of transport equations and a charge-balance equation describing carrier transi...

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Veröffentlicht in:	Russian microelectronics 2008-09, Vol.37 (5), p.296-301
Hauptverfasser:	Katsoev, V. V., Katsoev, L. V., Il’ichev, E. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrical Engineering Engineering Materials and Microstructure Characterization
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Requirements are defined for GaAs materials intended for solid-state detectors of ionizing radiation. A model is proposed to ascertain the role of deep-level centers in compensated semi-insulating GaAs. The model consists of transport equations and a charge-balance equation describing carrier transitions in a multi-level system. Its numerical analysis is performed to ascertain the relationship to be satisfied by dopant concentrations.
ISSN:	1063-7397 1608-3415
DOI:	10.1134/S1063739708050028