Interrelation between the impurity states of Si crystals and the dynamic behavior of short surface dislocations

Interrelation between the impurity states of Si crystals and the dynamic behavior of short surface dislocations

The influence of impurity atmospheres on the mobility and shape of short surface dislocations (with a length of L ≤ 100 μm) in Si crystals is considered in this paper. The difference between the evolution of impurity atmospheres in the vicinity of surface dislocations in the initial Si crystals and...

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Veröffentlicht in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2014-11, Vol.8 (6), p.1182-1185
Hauptverfasser: Makara, V. A., Steblenko, L. P., Kuryliuk, A. N., Kobzar, Yu. L., Krit, A. N., Kalinichenko, D. V.
Format: Artikel
Sprache:eng
Schlagworte:
Chemistry and Materials Science
Materials Science
Surfaces and Interfaces
Thin Films
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Zusammenfassung:The influence of impurity atmospheres on the mobility and shape of short surface dislocations (with a length of L ≤ 100 μm) in Si crystals is considered in this paper. The difference between the evolution of impurity atmospheres in the vicinity of surface dislocations in the initial Si crystals and in Si crystals with surfaces metallized with Cu is analyzed.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451014060093