The influence of low-intensity beta radiation on crack susceptibility under indentation of silicon

The dependence of the lengths of radial cracks formed during indentation of silicon single crystals on the depth of imprint has been studied using electron microscopy. The influence of low-intensity ( I = 10 5 cm −2 s –1 ) beta radiation on the crack susceptibility during indenter penetration to a d...

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Veröffentlicht in:	Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2011-04, Vol.5 (2), p.362-363
Hauptverfasser:	Dmitrievskii, A. A., Efremova, N. Yu, Shuklinov, A. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Materials Science Surfaces and Interfaces Thin Films
Online-Zugang:	Volltext
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Zusammenfassung:	The dependence of the lengths of radial cracks formed during indentation of silicon single crystals on the depth of imprint has been studied using electron microscopy. The influence of low-intensity ( I = 10 5 cm −2 s –1 ) beta radiation on the crack susceptibility during indenter penetration to a depth of ∼2.5 μm has been revealed.
ISSN:	1027-4510 1819-7094
DOI:	10.1134/S1027451011040082