Diagnostics of height distribution of InAs/GaAs quantum dot arrays by means of carbon tetrachloride treatment in vapor phase epitaxy conditions

A technique for determination of InAs quantum dots bimodal distribution has been developed. This technique is based on vapor-chemical etching of quantum dot arrays coated with thin GaAs layers and on combined investigation of the morphology and photoluminescence spectra of etched quantum-size structures. It has been shown that, in some growth modes of quantum-size heterostructures by metal-organic vapor phase epitaxy, bimodal arrays of large and small quantum dots are formed. The surface concentration of large and small dots has been established to be about 2 × 10 9 and 3 × 10 10 cm −2 , respectively.