Study of the long-range effect by the method of Rutherford backscattering with ion channeling under light irradiation of silicon
The results of a study of the effect of light irradiation of silicon on the spectra of Rutherford backscattering with ion channeling (RBSC) in the side opposite to the irradiated one are presented. It is shown that the integral yield of backscattered He + ions increases as a result of irradiation (t...
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| Veröffentlicht in: | Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2010-06, Vol.4 (3), p.515-517 |
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| container_title | Surface investigation, x-ray, synchrotron and neutron techniques |
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| creator | Levshunova, V. L. Pokhil, G. P. Tetel’baum, D. I. Chernykh, P. N. |
| description | The results of a study of the effect of light irradiation of silicon on the spectra of Rutherford backscattering with ion channeling (RBSC) in the side opposite to the irradiated one are presented. It is shown that the integral yield of backscattered He
+
ions increases as a result of irradiation (the long-range effect); in this case, the shape of the dependence of the effect size on the irradiation time is bell-like and agrees qualitatively with the results obtained by hardness measurements previously. These data show light generation of a high concentration of movable defects near the opposite plate side. |
| doi_str_mv | 10.1134/S1027451010030262 |
| format | Article |
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+
ions increases as a result of irradiation (the long-range effect); in this case, the shape of the dependence of the effect size on the irradiation time is bell-like and agrees qualitatively with the results obtained by hardness measurements previously. These data show light generation of a high concentration of movable defects near the opposite plate side.</description><identifier>ISSN: 1027-4510</identifier><identifier>EISSN: 1819-7094</identifier><identifier>DOI: 10.1134/S1027451010030262</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Chemistry and Materials Science ; Materials Science ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Surface investigation, x-ray, synchrotron and neutron techniques, 2010-06, Vol.4 (3), p.515-517</ispartof><rights>Pleiades Publishing, Ltd. 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c288t-4607608db77c128e8deaadf45e7ecdd4aec6a78aee6051d6558b01304c0017d23</citedby><cites>FETCH-LOGICAL-c288t-4607608db77c128e8deaadf45e7ecdd4aec6a78aee6051d6558b01304c0017d23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1027451010030262$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1027451010030262$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Levshunova, V. L.</creatorcontrib><creatorcontrib>Pokhil, G. P.</creatorcontrib><creatorcontrib>Tetel’baum, D. I.</creatorcontrib><creatorcontrib>Chernykh, P. N.</creatorcontrib><title>Study of the long-range effect by the method of Rutherford backscattering with ion channeling under light irradiation of silicon</title><title>Surface investigation, x-ray, synchrotron and neutron techniques</title><addtitle>J. Synch. Investig</addtitle><description>The results of a study of the effect of light irradiation of silicon on the spectra of Rutherford backscattering with ion channeling (RBSC) in the side opposite to the irradiated one are presented. It is shown that the integral yield of backscattered He
+
ions increases as a result of irradiation (the long-range effect); in this case, the shape of the dependence of the effect size on the irradiation time is bell-like and agrees qualitatively with the results obtained by hardness measurements previously. These data show light generation of a high concentration of movable defects near the opposite plate side.</description><subject>Chemistry and Materials Science</subject><subject>Materials Science</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>1027-4510</issn><issn>1819-7094</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9UMlOwzAQtRBIlMIHcPMPBMbZ7B5RxSZVQqJwjhx7krikdmU7Qrnx6SSUGxKnWd6imUfINYMbxrL8dssg5XnBgAFkkJbpCVkwwVYJh1V-OvUTnMz4ObkIYQdQ8KwoF-RrGwc9UtfQ2CHtnW0TL22LFJsGVaT1-APsMXZOz7TXYZp947ymtVQfQckY0Rvb0k8TO2qcpaqT1mI_7war0dPetF2kxnupjYwzZTIKpjfK2Uty1sg-4NVvXZL3h_u39VOyeXl8Xt9tEpUKEZO8BF6C0DXniqUChUYpdZMXyFFpnUtUpeRCIpZQMF0WhaiBZZArAMZ1mi0JO_oq70Lw2FQHb_bSjxWDao6w-hPhpEmPmnCYP0Rf7dzg7XTmP6Jv7Ct1dQ</recordid><startdate>20100601</startdate><enddate>20100601</enddate><creator>Levshunova, V. L.</creator><creator>Pokhil, G. P.</creator><creator>Tetel’baum, D. I.</creator><creator>Chernykh, P. N.</creator><general>SP MAIK Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100601</creationdate><title>Study of the long-range effect by the method of Rutherford backscattering with ion channeling under light irradiation of silicon</title><author>Levshunova, V. L. ; Pokhil, G. P. ; Tetel’baum, D. I. ; Chernykh, P. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c288t-4607608db77c128e8deaadf45e7ecdd4aec6a78aee6051d6558b01304c0017d23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Chemistry and Materials Science</topic><topic>Materials Science</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Levshunova, V. L.</creatorcontrib><creatorcontrib>Pokhil, G. P.</creatorcontrib><creatorcontrib>Tetel’baum, D. I.</creatorcontrib><creatorcontrib>Chernykh, P. N.</creatorcontrib><collection>CrossRef</collection><jtitle>Surface investigation, x-ray, synchrotron and neutron techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Levshunova, V. L.</au><au>Pokhil, G. P.</au><au>Tetel’baum, D. I.</au><au>Chernykh, P. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of the long-range effect by the method of Rutherford backscattering with ion channeling under light irradiation of silicon</atitle><jtitle>Surface investigation, x-ray, synchrotron and neutron techniques</jtitle><stitle>J. Synch. Investig</stitle><date>2010-06-01</date><risdate>2010</risdate><volume>4</volume><issue>3</issue><spage>515</spage><epage>517</epage><pages>515-517</pages><issn>1027-4510</issn><eissn>1819-7094</eissn><abstract>The results of a study of the effect of light irradiation of silicon on the spectra of Rutherford backscattering with ion channeling (RBSC) in the side opposite to the irradiated one are presented. It is shown that the integral yield of backscattered He
+
ions increases as a result of irradiation (the long-range effect); in this case, the shape of the dependence of the effect size on the irradiation time is bell-like and agrees qualitatively with the results obtained by hardness measurements previously. These data show light generation of a high concentration of movable defects near the opposite plate side.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1027451010030262</doi><tpages>3</tpages></addata></record> |
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| ispartof | Surface investigation, x-ray, synchrotron and neutron techniques, 2010-06, Vol.4 (3), p.515-517 |
| issn | 1027-4510 1819-7094 |
| language | eng |
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| source | SpringerLink (Online service) |
| subjects | Chemistry and Materials Science Materials Science Surfaces and Interfaces Thin Films |
| title | Study of the long-range effect by the method of Rutherford backscattering with ion channeling under light irradiation of silicon |
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