Study of the long-range effect by the method of Rutherford backscattering with ion channeling under light irradiation of silicon

The results of a study of the effect of light irradiation of silicon on the spectra of Rutherford backscattering with ion channeling (RBSC) in the side opposite to the irradiated one are presented. It is shown that the integral yield of backscattered He + ions increases as a result of irradiation (the long-range effect); in this case, the shape of the dependence of the effect size on the irradiation time is bell-like and agrees qualitatively with the results obtained by hardness measurements previously. These data show light generation of a high concentration of movable defects near the opposite plate side.