Study of thin Ge films with amorphous and nanocrystalline phases via the techniques of EXAFS spectroscopy and AFM

The local atomic structure and surface morphology of thin semiconductor films of Ge have been studied via extended X-ray absorption fine structure spectroscopy and atomic force microscopy. The films have been obtained by thermal evaporation of a material in an ultrahigh vacuum at different substrate temperatures. The films contain both amorphous and nanocrystalline phases. The percentage of the phases depends on the condensation temperature. The classical linear dependence of grain sizes on condensation temperature T is violated at T=100°C.