Studies of thermal stability of nanocrystalline SnO2, ZrO2, and SiC for semiconductor and thermocatalytic gas sensors

The thermal stability of synthesized and commercial SnO 2 , ZrO 2 , and SiC nanopowders is compared. The crystallite growth rate during the isothermal annealing of the materials at 700°C for 30 h is evaluated. The crystallites’ average size was determined by X-ray phase analysis (using the Scherrer...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Russian journal of electrochemistry 2009-04, Vol.45 (4), p.470-475
Hauptverfasser: Pavelko, R. G., Vasil’ev, A. A., Sevast’yanov, V. G., Gispert-Guirado, F., Vilanova, X., Kuznetsov, N. T.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The thermal stability of synthesized and commercial SnO 2 , ZrO 2 , and SiC nanopowders is compared. The crystallite growth rate during the isothermal annealing of the materials at 700°C for 30 h is evaluated. The crystallites’ average size was determined by X-ray phase analysis (using the Scherrer method). The effect of impurity content on the kinetics of crystallite growth is studied for the synthesized SnO 2 and ZrO 2 . Semiconductor and thermocatalytic sensors, based on the synthesized and commercial materials, are manufactured. The long-term stability of the sensors’ signal is compared with the thermal stability of the nanopowders.
ISSN:1023-1935
1608-3342
DOI:10.1134/S1023193509040181