Porous Silicon Capacitor Structures with Embedded Barium Strontium Titanates
The possibility of creating capacitor structures based on porous silicon with oxide ferroelectrics embedded in the pores—barium strontium titanates, which have a diffuse phase transition—is considered. In this case, thin films of barium strontium titanate are characterized as nanostructures with fer...
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Veröffentlicht in: | Theoretical foundations of chemical engineering 2020-09, Vol.54 (5), p.1014-1019 |
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Sprache: | eng |
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Zusammenfassung: | The possibility of creating capacitor structures based on porous silicon with oxide ferroelectrics embedded in the pores—barium strontium titanates, which have a diffuse phase transition—is considered. In this case, thin films of barium strontium titanate are characterized as nanostructures with ferroelectric properties. To obtain such structures, the extraction-pyrolytic method is used. The dependences of the capacitance and permittivity of the structures on the ratio of barium and strontium components in barium strontium titanates are studied. The results of this work confirm the possibility of using the presented technologies—the production of porous silicon matrices and the extraction-pyrolytic method for producing a ferroelectric based on barium and strontium titanates—to create a capacitive-type structures with different dielectric characteristics due to the possibility of varying the obtained ferroelectric composition, dimension, and morphology of the porous silicon matrix. |
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ISSN: | 0040-5795 1608-3431 |
DOI: | 10.1134/S0040579520050218 |