The Effect of High Background and Dead Time of an InGaAs/InP Single-Photon Avalanche Photodiode on the Registration of Microsecond Range Near-Infrared Luminescence

The Effect of High Background and Dead Time of an InGaAs/InP Single-Photon Avalanche Photodiode on the Registration of Microsecond Range Near-Infrared Luminescence

The effects of a high background count and a microsecond dead time interval on a gated InGaAs/InP single-photon avalanche photodiode (SPAD) during microsecond luminescence decay registration are discussed. It is shown that the background count rate of the SPAD limits its use for time-resolved and st...

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Veröffentlicht in:Optics and spectroscopy 2020-05, Vol.128 (5), p.674-677
Hauptverfasser: Parfenov, P. S., Litvin, A. P., Onishchuk, D. A., Gonchar, K. A., Berwick, K., Fedorov, A. V., Baranov, A. V.
Format: Artikel
Sprache:eng
Schlagworte:
Avalanche diodes
Indium phosphides
Lasers
Luminescence
Optical Devices
Optical Sensors and Transducers
Optics
Photodiodes
Photon avalanches
Photonics
Photons
Physical Sciences
Physics
Physics and Astronomy
Science & Technology
Spectroscopy
Technology
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Zusammenfassung:The effects of a high background count and a microsecond dead time interval on a gated InGaAs/InP single-photon avalanche photodiode (SPAD) during microsecond luminescence decay registration are discussed. It is shown that the background count rate of the SPAD limits its use for time-resolved and steady-spectral measurements, and that a “pile-up” effect appears in the microsecond range.
ISSN:0030-400X
1562-6911
DOI:10.1134/S0030400X20050100