Determination of the possibility of controlling the optical properties of dielectric photonic-crystal fibers with semiconductor inclusions

We have shown that the characteristics of propagation of optical radiation in a photonic-crystal fiber that contains semiconductor elements can be controlled by external radiation that acts on the structure. We have studied a photonic-crystal fiber that is formed by air holes in a dielectric that contains a semiconductor (GaAs) tube in the central region (core region) filled inside with the same dielectric. We have shown that the power of the radiation that is necessary to control the transmission characteristics at a wavelength λ = 1550 nm is determined by the construction of the device and can be fairly small (10 9 W/m 2 ).