Electron-beam pumped pulsed IR semiconductor laser based on a quantum-size InGaAs/AlGaAs structure

Electron-beam pumped pulsed IR semiconductor laser based on a quantum-size InGaAs/AlGaAs structure

The characteristics of the radiation of a 890-nm laser based on a quantum-size InGaAs/AlGaAs structure, pumped by a (15–26)-keV electron beam, have been studied. An output pulsed power up to 90 W with an efficiency of 3.5% is obtained from each laser end face at room temperature of the active elemen...

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Veröffentlicht in:Optics and spectroscopy 2011-08, Vol.111 (2), p.182-183
Hauptverfasser: Zverev, M. M., Gamov, N. A., Zhdanova, E. V., Ladugin, M. A., Marmalyuk, A. A., Peregoudov, D. V., Studionov, V. B.
Format: Artikel
Sprache:eng
Schlagworte:
Devices
Lasers
Materials
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Semiconductor Lasers
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Zusammenfassung:The characteristics of the radiation of a 890-nm laser based on a quantum-size InGaAs/AlGaAs structure, pumped by a (15–26)-keV electron beam, have been studied. An output pulsed power up to 90 W with an efficiency of 3.5% is obtained from each laser end face at room temperature of the active element and a cavity length of 0.5 mm.
ISSN:0030-400X
1562-6911
DOI:10.1134/S0030400X11080339