Roles of Elements of a Heterostructure Based on the Topological Phase of Hg1 –xCdxTe in the Effect of PT-Symmetric Terahertz Photoconductivity

It is demonstrated that the PT -symmetric terahertz photoconductivity observed in heterostructures based on thick Hg 1 – x Cd x Te films in the topological phase is due to the photoexcitation of charge carriers in the film bulk. At the same time, the place of localization of the effect is the topolo...

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Veröffentlicht in:	JETP letters 2021-04, Vol.113 (8), p.542-546
Hauptverfasser:	Kazakov, A. S., Galeeva, A. V., Ikonnikov, A. V., Dolzhenko, D. E., Ryabova, L. I., Mikhailov, N. N., Dvoretskiy, S. A., Bannikov, M. I., Danilov, S. N., Khokhlov, D. R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic Biological and Medical Physics Biophysics Buffer layers Condensed Matter Current carriers Heterostructures Localization Molecular Optical and Plasma Physics Particle and Nuclear Physics Photoconductivity Photoexcitation Physical Sciences Physics Physics and Astronomy Physics, Multidisciplinary Quantum Information Technology Science & Technology Solid State Physics Spintronics Thick films Topology
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Zusammenfassung:	It is demonstrated that the PT -symmetric terahertz photoconductivity observed in heterostructures based on thick Hg 1 – x Cd x Te films in the topological phase is due to the photoexcitation of charge carriers in the film bulk. At the same time, the place of localization of the effect is the topological film–trivial buffer layer heterointerface. The model describing such a spatial separation of the source of nonequilibrium charge carriers and the effect localization is discussed.
ISSN:	0021-3640 1090-6487
DOI:	10.1134/S002136402108004X