Investigation of the emission of photons induced in the volume reflection of 10-GeV positrons in a bent silicon single crystal

The emission of photons in the motion of a 10-GeV positron beam in bent silicon crystals has been experimentally investigated. The experimental data are compared with the theoretical calculations.

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Bibliographische Detailangaben
Veröffentlicht in:	JETP letters 2008-12, Vol.88 (7), p.414-417
Hauptverfasser:	Afonin, A. G., Baranov, V. T., Britvich, G. I., Bugorskii, A. P., Kotov, V. I., Kushnirenko, A. E., Maisheev, V. A., Pikalov, V. A., Chepegin, V. N., Chesnokov, Yu. A., Yazynin, I. A., Ivanov, Yu. M., Skorobogatov, V. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic Atoms Biological and Medical Physics Biophysics Molecular Optical and Plasma Physics Particle and Nuclear Physics Physics Physics and Astronomy Quantum Information Technology Radiations Solid State Physics Spectra Spintronics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The emission of photons in the motion of a 10-GeV positron beam in bent silicon crystals has been experimentally investigated. The experimental data are compared with the theoretical calculations.
ISSN:	0021-3640 1090-6487
DOI:	10.1134/S0021364008190028