Transient processes in high-voltage switches based on series-connected insulated-gap bipolar transistors

The results of experimental studies of the process of switching a composite semiconductor switch, which consists of series-connected insulated-gate bipolar transistors with artificially nonuniformly distributed operating parameters are presented.

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Bibliographische Detailangaben
Veröffentlicht in:	Instruments and experimental techniques (New York) 2016-03, Vol.59 (2), p.222-225
Hauptverfasser:	Malashin, M. V., Moshkunov, S. I., Khomich, V. Yu
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrical Engineering Electronics and Radio Engineering Measurement Science and Instrumentation Physical Chemistry Physics Physics and Astronomy
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The results of experimental studies of the process of switching a composite semiconductor switch, which consists of series-connected insulated-gate bipolar transistors with artificially nonuniformly distributed operating parameters are presented.
ISSN:	0020-4412 1608-3180
DOI:	10.1134/S0020441216020081