Morphology of GaSb-based island films

GaSb nanoisland films have been grown via incongruent evaporation of Ga 1 − x Sb x films, and their surface morphology has been studied by atomic force microscopy. The surface density and characteristic dimensions of the islands have been shown to depend on the evaporation temperature. The fractal d...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Inorganic materials 2012, Vol.48 (1), p.10-15
Hauptverfasser:	Kushkhov, A. R., Rabinovich, O. I., Gaev, D. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry Chemistry and Materials Science Industrial Chemistry/Chemical Engineering Inorganic Chemistry Materials Science
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	GaSb nanoisland films have been grown via incongruent evaporation of Ga 1 − x Sb x films, and their surface morphology has been studied by atomic force microscopy. The surface density and characteristic dimensions of the islands have been shown to depend on the evaporation temperature. The fractal dimension of the surface of the grown structures has been evaluated.
ISSN:	0020-1685 1608-3172
DOI:	10.1134/S0020168512010098