Preparation and electrical properties of (1 − x)(Ba,Y)TiO3 · xPbTiO3 materials containing low-melting B2O3-PbO-SiO2 glass additions
We have studied the electrical properties of (1 − x )(Ba,Y)TiO 3 · x PbTiO 3 -based solid solutions containing different percentages of low-melting glass. The materials were prepared by solid-state reactions, sintered in air at temperatures from 1100–1300°C, and characterized by complex impedance me...
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| Veröffentlicht in: | Inorganic materials 2011-12, Vol.47 (12), p.1378-1383 |
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| container_title | Inorganic materials |
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| creator | Plutenko, T. A. V’yunov, O. I. Yanchevskii, O. Z. Belous, A. G. |
| description | We have studied the electrical properties of (1 −
x
)(Ba,Y)TiO
3
·
x
PbTiO
3
-based solid solutions containing different percentages of low-melting glass. The materials were prepared by solid-state reactions, sintered in air at temperatures from 1100–1300°C, and characterized by complex impedance measurements in wide frequency and temperature ranges. The results demonstrate that the positive temperature coefficient of resistance effect in these materials, containing different percentages of low-melting glass, is contributed mainly by both the grain boundaries and surface layer. With increasing glass content, the ratio of the maximum resistivity to the minimum resistivity increases and the influence of the surface layer on the positive temperature coefficient of resistance effect becomes stronger. With increasing glass content, the grainboundary potential barrier height in the (1 −
x
)(Ba,Y)TiO
3
·
x
PbTiO
3
materials increases. |
| doi_str_mv | 10.1134/S0020168511110197 |
| format | Article |
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x
)(Ba,Y)TiO
3
·
x
PbTiO
3
-based solid solutions containing different percentages of low-melting glass. The materials were prepared by solid-state reactions, sintered in air at temperatures from 1100–1300°C, and characterized by complex impedance measurements in wide frequency and temperature ranges. The results demonstrate that the positive temperature coefficient of resistance effect in these materials, containing different percentages of low-melting glass, is contributed mainly by both the grain boundaries and surface layer. With increasing glass content, the ratio of the maximum resistivity to the minimum resistivity increases and the influence of the surface layer on the positive temperature coefficient of resistance effect becomes stronger. With increasing glass content, the grainboundary potential barrier height in the (1 −
x
)(Ba,Y)TiO
3
·
x
PbTiO
3
materials increases.</description><identifier>ISSN: 0020-1685</identifier><identifier>EISSN: 1608-3172</identifier><identifier>DOI: 10.1134/S0020168511110197</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Chemistry ; Chemistry and Materials Science ; Industrial Chemistry/Chemical Engineering ; Inorganic Chemistry ; Materials Science</subject><ispartof>Inorganic materials, 2011-12, Vol.47 (12), p.1378-1383</ispartof><rights>Pleiades Publishing, Ltd. 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1337-fcf798934d8116b50fb24cef6e5930b9fa2141c209f698886d5cdc2126929fe3</citedby><cites>FETCH-LOGICAL-c1337-fcf798934d8116b50fb24cef6e5930b9fa2141c209f698886d5cdc2126929fe3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S0020168511110197$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S0020168511110197$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>Plutenko, T. A.</creatorcontrib><creatorcontrib>V’yunov, O. I.</creatorcontrib><creatorcontrib>Yanchevskii, O. Z.</creatorcontrib><creatorcontrib>Belous, A. G.</creatorcontrib><title>Preparation and electrical properties of (1 − x)(Ba,Y)TiO3 · xPbTiO3 materials containing low-melting B2O3-PbO-SiO2 glass additions</title><title>Inorganic materials</title><addtitle>Inorg Mater</addtitle><description>We have studied the electrical properties of (1 −
x
)(Ba,Y)TiO
3
·
x
PbTiO
3
-based solid solutions containing different percentages of low-melting glass. The materials were prepared by solid-state reactions, sintered in air at temperatures from 1100–1300°C, and characterized by complex impedance measurements in wide frequency and temperature ranges. The results demonstrate that the positive temperature coefficient of resistance effect in these materials, containing different percentages of low-melting glass, is contributed mainly by both the grain boundaries and surface layer. With increasing glass content, the ratio of the maximum resistivity to the minimum resistivity increases and the influence of the surface layer on the positive temperature coefficient of resistance effect becomes stronger. With increasing glass content, the grainboundary potential barrier height in the (1 −
x
)(Ba,Y)TiO
3
·
x
PbTiO
3
materials increases.</description><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Industrial Chemistry/Chemical Engineering</subject><subject>Inorganic Chemistry</subject><subject>Materials Science</subject><issn>0020-1685</issn><issn>1608-3172</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kM9KAzEQxoMoWKsP4C3HFoxmkv2THG3xHxS20F48LdlsUlK2uyVZsb6AePZlvPsoPom71pvgXOaDb34zw4fQOdBLAB5dLShlFBIRQ1cUZHqABpBQQTik7BANepv0_jE6CWFNKY1iIQfode7NVnnVuqbGqi6xqYxuvdOqwlvfbI1vnQm4sXgE-OvtHe_Go4m6eBwvXcbx5wfezYsfuVGt8U5VAeumbpWrXb3CVfNMNqZqez1hGSfzIiMLlzG8qlQIWJWl6y-HU3RkO9ac_fYhWt7eLKf3ZJbdPUyvZ0QD5ymx2qZSSB6VAiApYmoLFmljExNLTgtpFYMINKPSJlIIkZSxLjUDlkgmreFDBPu12jcheGPzrXcb5V9yoHmfY_4nx45heyZ0s_XK-HzdPPm6-_If6BuPVHTU</recordid><startdate>201112</startdate><enddate>201112</enddate><creator>Plutenko, T. A.</creator><creator>V’yunov, O. I.</creator><creator>Yanchevskii, O. Z.</creator><creator>Belous, A. G.</creator><general>SP MAIK Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201112</creationdate><title>Preparation and electrical properties of (1 − x)(Ba,Y)TiO3 · xPbTiO3 materials containing low-melting B2O3-PbO-SiO2 glass additions</title><author>Plutenko, T. A. ; V’yunov, O. I. ; Yanchevskii, O. Z. ; Belous, A. G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1337-fcf798934d8116b50fb24cef6e5930b9fa2141c209f698886d5cdc2126929fe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Industrial Chemistry/Chemical Engineering</topic><topic>Inorganic Chemistry</topic><topic>Materials Science</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Plutenko, T. A.</creatorcontrib><creatorcontrib>V’yunov, O. I.</creatorcontrib><creatorcontrib>Yanchevskii, O. Z.</creatorcontrib><creatorcontrib>Belous, A. G.</creatorcontrib><collection>CrossRef</collection><jtitle>Inorganic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Plutenko, T. A.</au><au>V’yunov, O. I.</au><au>Yanchevskii, O. Z.</au><au>Belous, A. G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation and electrical properties of (1 − x)(Ba,Y)TiO3 · xPbTiO3 materials containing low-melting B2O3-PbO-SiO2 glass additions</atitle><jtitle>Inorganic materials</jtitle><stitle>Inorg Mater</stitle><date>2011-12</date><risdate>2011</risdate><volume>47</volume><issue>12</issue><spage>1378</spage><epage>1383</epage><pages>1378-1383</pages><issn>0020-1685</issn><eissn>1608-3172</eissn><abstract>We have studied the electrical properties of (1 −
x
)(Ba,Y)TiO
3
·
x
PbTiO
3
-based solid solutions containing different percentages of low-melting glass. The materials were prepared by solid-state reactions, sintered in air at temperatures from 1100–1300°C, and characterized by complex impedance measurements in wide frequency and temperature ranges. The results demonstrate that the positive temperature coefficient of resistance effect in these materials, containing different percentages of low-melting glass, is contributed mainly by both the grain boundaries and surface layer. With increasing glass content, the ratio of the maximum resistivity to the minimum resistivity increases and the influence of the surface layer on the positive temperature coefficient of resistance effect becomes stronger. With increasing glass content, the grainboundary potential barrier height in the (1 −
x
)(Ba,Y)TiO
3
·
x
PbTiO
3
materials increases.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S0020168511110197</doi><tpages>6</tpages></addata></record> |
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| issn | 0020-1685 1608-3172 |
| language | eng |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Chemistry Chemistry and Materials Science Industrial Chemistry/Chemical Engineering Inorganic Chemistry Materials Science |
| title | Preparation and electrical properties of (1 − x)(Ba,Y)TiO3 · xPbTiO3 materials containing low-melting B2O3-PbO-SiO2 glass additions |
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