Preparation and electrical properties of (1 − x)(Ba,Y)TiO3 · xPbTiO3 materials containing low-melting B2O3-PbO-SiO2 glass additions

We have studied the electrical properties of (1 − x )(Ba,Y)TiO 3 · x PbTiO 3 -based solid solutions containing different percentages of low-melting glass. The materials were prepared by solid-state reactions, sintered in air at temperatures from 1100–1300°C, and characterized by complex impedance measurements in wide frequency and temperature ranges. The results demonstrate that the positive temperature coefficient of resistance effect in these materials, containing different percentages of low-melting glass, is contributed mainly by both the grain boundaries and surface layer. With increasing glass content, the ratio of the maximum resistivity to the minimum resistivity increases and the influence of the surface layer on the positive temperature coefficient of resistance effect becomes stronger. With increasing glass content, the grainboundary potential barrier height in the (1 − x )(Ba,Y)TiO 3 · x PbTiO 3 materials increases.