Physical mechanisms of laser correction and stabilization of the parameters of Al-n-n +-Si-Al schottky barrier structures
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2004-06, Vol.38 (6), p.663-665 |
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| container_end_page | 665 |
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| container_issue | 6 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 38 |
| creator | Vorobets, G. I. Vorobets, M. M. Strebezhev, V. N. Buzaneva, E. V. Shkavro, A. G. |
| description | |
| doi_str_mv | 10.1134/1.1766368 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2004-06, Vol.38 (6), p.663-665 |
| issn | 1063-7826 1090-6479 |
| language | eng |
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| source | SpringerNature Complete Journals |
| title | Physical mechanisms of laser correction and stabilization of the parameters of Al-n-n +-Si-Al schottky barrier structures |
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