Hydrogen-induced splitting in silicon over a buried layer heavily doped with boron
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2003-06, Vol.37 (6), p.620-624 |
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| container_issue | 6 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 37 |
| creator | Kilanov, D. V. Popov, V. P. Safronov, L. N. Nikiforov, A. I. Sholz, R. |
| description | |
| doi_str_mv | 10.1134/1.1582524 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2003-06, Vol.37 (6), p.620-624 |
| issn | 1063-7826 1090-6479 |
| language | eng |
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| source | SpringerNature Journals |
| title | Hydrogen-induced splitting in silicon over a buried layer heavily doped with boron |
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