Special features of formation and characteristics of Ni/21R-SiC Schottky diodes
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2003-04, Vol.37 (4), p.456-461 |
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| container_end_page | 461 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 37 |
| creator | Litvinov, V. L. Demakov, K. D. Ageev, O. A. Svetlichny, A. M. Konakova, R. V. Lytvyn, P. M. Lytvyn, O. S. Milenin, V. V. |
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| doi_str_mv | 10.1134/1.1568468 |
| format | Article |
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| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2003-04, Vol.37 (4), p.456-461 |
| issn | 1063-7826 1090-6479 |
| language | eng |
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| source | SpringerNature Journals |
| title | Special features of formation and characteristics of Ni/21R-SiC Schottky diodes |
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