Tensoresistive effects in tin-doped silicon under static and dynamic pressure conditions
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| Veröffentlicht in: | Technical physics letters 2003-03, Vol.29 (2), p.95-96 |
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| Sprache: | eng |
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| container_end_page | 96 |
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| container_issue | 2 |
| container_start_page | 95 |
| container_title | Technical physics letters |
| container_volume | 29 |
| creator | Mamatkarimov, O. O. Khamidov, R. Kh |
| description | |
| doi_str_mv | 10.1134/1.1558735 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1063-7850 |
| ispartof | Technical physics letters, 2003-03, Vol.29 (2), p.95-96 |
| issn | 1063-7850 1090-6533 |
| language | eng |
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| source | SpringerLink Journals - AutoHoldings |
| title | Tensoresistive effects in tin-doped silicon under static and dynamic pressure conditions |
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