Two-wavelength emission from a GaInPAsSb/InAs structure with a broken-gap isotype heterojunction and a p-n junction in the substrate
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| Veröffentlicht in: | Technical physics letters 2002-12, Vol.28 (12), p.1001-1003 |
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| container_end_page | 1003 |
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| container_issue | 12 |
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| container_title | Technical physics letters |
| container_volume | 28 |
| creator | Aidaraliev, M. Zotova, N. V. Karandashev, S. A. Matveev, B. A. Remennyi, M. A. Stus’, N. M. Talalakin, G. N. Shustov, V. V. |
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| doi_str_mv | 10.1134/1.1535484 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1063-7850 |
| ispartof | Technical physics letters, 2002-12, Vol.28 (12), p.1001-1003 |
| issn | 1063-7850 1090-6533 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_1_1535484 |
| source | SpringerLink Journals - AutoHoldings |
| title | Two-wavelength emission from a GaInPAsSb/InAs structure with a broken-gap isotype heterojunction and a p-n junction in the substrate |
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