Features of the structure of a porous silicon carbide layer obtained by electrochemical etching of a 6H-SiC substrate
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| Veröffentlicht in: | Technical physics letters 2002-11, Vol.28 (11), p.935-938 |
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| container_end_page | 938 |
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| container_issue | 11 |
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| container_title | Technical physics letters |
| container_volume | 28 |
| creator | Sorokin, L. M. Savkina, N. S. Shuman, V. B. Lebedev, A. A. Mosina, G. N. Hutchison, G. |
| description | |
| doi_str_mv | 10.1134/1.1526889 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1063-7850 |
| ispartof | Technical physics letters, 2002-11, Vol.28 (11), p.935-938 |
| issn | 1063-7850 1090-6533 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_1_1526889 |
| source | SpringerNature Journals |
| title | Features of the structure of a porous silicon carbide layer obtained by electrochemical etching of a 6H-SiC substrate |
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