Increase in quantum efficiency of IR emission in elastically strained narrow-gap semiconductors
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2002-04, Vol.36 (4), p.404-409 |
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| Sprache: | eng |
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| container_issue | 4 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 36 |
| creator | Gasan-zade, S. G. Strikha, M. V. Staryi, S. V. Shepel’skii, G. A. Boiko, V. A. |
| description | |
| doi_str_mv | 10.1134/1.1469188 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2002-04, Vol.36 (4), p.404-409 |
| issn | 1063-7826 1090-6479 |
| language | eng |
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| source | SpringerNature Journals |
| title | Increase in quantum efficiency of IR emission in elastically strained narrow-gap semiconductors |
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