InAsSb/InAsSbP double-heterostructure lasers emitting in the 3–4 µm spectral range
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2001-12, Vol.35 (12), p.1404-1417 |
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container_title | Semiconductors (Woodbury, N.Y.) |
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creator | Danilova, T. N. Imenkov, A. N. Kolchanova, N. M. Yakovlev, Yu. P. |
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doi_str_mv | 10.1134/1.1427979 |
format | Article |
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title | InAsSb/InAsSbP double-heterostructure lasers emitting in the 3–4 µm spectral range |
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