Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2001-08, Vol.35 (8), p.918-923
Hauptverfasser: Shengurov, V. G., Svetlov, S. P., Chalkov, V. Yu, Maksimov, G. A., Krasil’nik, Z. F., Andreev, B. A., Stepikhova, M. V., Shengurov, D. V., Palmetshofer, L., Ellmer, H.
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container_title Semiconductors (Woodbury, N.Y.)
container_volume 35
creator Shengurov, V. G.
Svetlov, S. P.
Chalkov, V. Yu
Maksimov, G. A.
Krasil’nik, Z. F.
Andreev, B. A.
Stepikhova, M. V.
Shengurov, D. V.
Palmetshofer, L.
Ellmer, H.
description
doi_str_mv 10.1134/1.1393027
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title Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy
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