Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2001-08, Vol.35 (8), p.918-923 |
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creator | Shengurov, V. G. Svetlov, S. P. Chalkov, V. Yu Maksimov, G. A. Krasil’nik, Z. F. Andreev, B. A. Stepikhova, M. V. Shengurov, D. V. Palmetshofer, L. Ellmer, H. |
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doi_str_mv | 10.1134/1.1393027 |
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title | Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy |
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