The dislocation origin and model of excess tunnel current in GaP p-n structures
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2000-01, Vol.34 (11), p.1305-1310 |
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| container_end_page | 1310 |
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| container_issue | 11 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 34 |
| creator | Evstropov, V. V. Dzhumaeva, M. Zhilyaev, Yu. V. Nazarov, N. Sitnikova, A. A. Fedorov, L. M. |
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| doi_str_mv | 10.1134/1.1325428 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1134_1_1325428</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1134_1_1325428</sourcerecordid><originalsourceid>FETCH-LOGICAL-c227t-58747a625c83d24f75991bcdd6a2f0a8dbcc265614144e3290f4befa1f59f4233</originalsourceid><addsrcrecordid>eNotkEtLAzEYRYMoWKsL_0G2LlLz5Z2lFK1CoS7qesjkoSNtpiQZ0H9vi13dy-VwFwehe6ALAC4eYQGcScHMBZoBtZQooe3lqStOtGHqGt3U-k0pgJFihjbbr4jDUHejd20YMx7L8Dlk7HLA-zHEHR4Tjj8-1orblPNx8FMpMTd8pFbuHR9IxrWVybepxHqLrpLb1Xh3zjn6eHneLl_JerN6Wz6tiWdMNyKNFtopJr3hgYmkpbXQ-xCUY4k6E3rvmZIKBAgRObM0iT4mB0naJBjnc_Tw_-vLWGuJqTuUYe_Kbwe0O5nooDub4H8cXk__</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>The dislocation origin and model of excess tunnel current in GaP p-n structures</title><source>SpringerLink Journals</source><creator>Evstropov, V. V. ; Dzhumaeva, M. ; Zhilyaev, Yu. V. ; Nazarov, N. ; Sitnikova, A. A. ; Fedorov, L. M.</creator><creatorcontrib>Evstropov, V. V. ; Dzhumaeva, M. ; Zhilyaev, Yu. V. ; Nazarov, N. ; Sitnikova, A. A. ; Fedorov, L. M.</creatorcontrib><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/1.1325428</identifier><language>eng</language><ispartof>Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (11), p.1305-1310</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c227t-58747a625c83d24f75991bcdd6a2f0a8dbcc265614144e3290f4befa1f59f4233</citedby><cites>FETCH-LOGICAL-c227t-58747a625c83d24f75991bcdd6a2f0a8dbcc265614144e3290f4befa1f59f4233</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Evstropov, V. V.</creatorcontrib><creatorcontrib>Dzhumaeva, M.</creatorcontrib><creatorcontrib>Zhilyaev, Yu. V.</creatorcontrib><creatorcontrib>Nazarov, N.</creatorcontrib><creatorcontrib>Sitnikova, A. A.</creatorcontrib><creatorcontrib>Fedorov, L. M.</creatorcontrib><title>The dislocation origin and model of excess tunnel current in GaP p-n structures</title><title>Semiconductors (Woodbury, N.Y.)</title><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotkEtLAzEYRYMoWKsL_0G2LlLz5Z2lFK1CoS7qesjkoSNtpiQZ0H9vi13dy-VwFwehe6ALAC4eYQGcScHMBZoBtZQooe3lqStOtGHqGt3U-k0pgJFihjbbr4jDUHejd20YMx7L8Dlk7HLA-zHEHR4Tjj8-1orblPNx8FMpMTd8pFbuHR9IxrWVybepxHqLrpLb1Xh3zjn6eHneLl_JerN6Wz6tiWdMNyKNFtopJr3hgYmkpbXQ-xCUY4k6E3rvmZIKBAgRObM0iT4mB0naJBjnc_Tw_-vLWGuJqTuUYe_Kbwe0O5nooDub4H8cXk__</recordid><startdate>20000101</startdate><enddate>20000101</enddate><creator>Evstropov, V. V.</creator><creator>Dzhumaeva, M.</creator><creator>Zhilyaev, Yu. V.</creator><creator>Nazarov, N.</creator><creator>Sitnikova, A. A.</creator><creator>Fedorov, L. M.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20000101</creationdate><title>The dislocation origin and model of excess tunnel current in GaP p-n structures</title><author>Evstropov, V. V. ; Dzhumaeva, M. ; Zhilyaev, Yu. V. ; Nazarov, N. ; Sitnikova, A. A. ; Fedorov, L. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c227t-58747a625c83d24f75991bcdd6a2f0a8dbcc265614144e3290f4befa1f59f4233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Evstropov, V. V.</creatorcontrib><creatorcontrib>Dzhumaeva, M.</creatorcontrib><creatorcontrib>Zhilyaev, Yu. V.</creatorcontrib><creatorcontrib>Nazarov, N.</creatorcontrib><creatorcontrib>Sitnikova, A. A.</creatorcontrib><creatorcontrib>Fedorov, L. M.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Evstropov, V. V.</au><au>Dzhumaeva, M.</au><au>Zhilyaev, Yu. V.</au><au>Nazarov, N.</au><au>Sitnikova, A. A.</au><au>Fedorov, L. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The dislocation origin and model of excess tunnel current in GaP p-n structures</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><date>2000-01-01</date><risdate>2000</risdate><volume>34</volume><issue>11</issue><spage>1305</spage><epage>1310</epage><pages>1305-1310</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><doi>10.1134/1.1325428</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (11), p.1305-1310 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_1_1325428 |
| source | SpringerLink Journals |
| title | The dislocation origin and model of excess tunnel current in GaP p-n structures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T02%3A58%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20dislocation%20origin%20and%20model%20of%20excess%20tunnel%20current%20in%20GaP%20p-n%20structures&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Evstropov,%20V.%20V.&rft.date=2000-01-01&rft.volume=34&rft.issue=11&rft.spage=1305&rft.epage=1310&rft.pages=1305-1310&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/1.1325428&rft_dat=%3Ccrossref%3E10_1134_1_1325428%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |