Breakdown of shallow-level donors in Si and Ge on the insulating side of a strain-induced metal-insulator transition
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2000-01, Vol.34 (9), p.1021-1023 |
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| container_end_page | 1023 |
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| container_issue | 9 |
| container_start_page | 1021 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 34 |
| creator | Budzulyak, S. I. Venger, E. F. Dotsenko, Yu. P. Ermakov, V. N. Kolomoets, V. V. Machulin, V. F. Panasyuk, L. I. |
| description | |
| doi_str_mv | 10.1134/1.1309413 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (9), p.1021-1023 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_1_1309413 |
| source | SpringerLink Journals - AutoHoldings |
| title | Breakdown of shallow-level donors in Si and Ge on the insulating side of a strain-induced metal-insulator transition |
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