Tunnel light-emitting Si:(Er,O) diodes with a short rise time of Er3+ electroluminescence under breakdown conditions
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2000-08, Vol.34 (8), p.927-930 |
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| Sprache: | eng |
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| container_end_page | 930 |
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| container_issue | 8 |
| container_start_page | 927 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 34 |
| creator | Emel’yanov, A. M. Sobolev, N. A. Trishenkov, M. A. Khakuashev, P. E. |
| description | |
| doi_str_mv | 10.1134/1.1188102 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2000-08, Vol.34 (8), p.927-930 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_1_1188102 |
| source | SpringerLink Journals - AutoHoldings |
| title | Tunnel light-emitting Si:(Er,O) diodes with a short rise time of Er3+ electroluminescence under breakdown conditions |
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