Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048–1053 (October 1998)]
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 1999-02, Vol.33 (2), p.222-222 |
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| container_end_page | 222 |
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| container_issue | 2 |
| container_start_page | 222 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 33 |
| creator | Katsavets, N. I. Laws, G. M. Harrison, I. Larkins, E. C. Benson, T. M. Cheng, T. S. Foxon, C. T. |
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| doi_str_mv | 10.1134/1.1187675 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 1999-02, Vol.33 (2), p.222-222 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_1_1187675 |
| source | SpringerLink Journals - AutoHoldings |
| title | Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048–1053 (October 1998)] |
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