Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 1998-07, Vol.32 (7), p.692-695 |
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| container_end_page | 695 |
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| container_issue | 7 |
| container_start_page | 692 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 32 |
| creator | Chaldyshev, V. V. Kunitsyn, A. E. Tret’yakov, V. V. Faleev, N. N. Preobrazhenskii, V. V. Putyato, M. A. Semyagin, B. R. |
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| doi_str_mv | 10.1134/1.1187485 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 1998-07, Vol.32 (7), p.692-695 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_1_1187485 |
| source | SpringerLink Journals - AutoHoldings |
| title | Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures |
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