Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 1997-12, Vol.31 (12), p.1221-1224 |
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| Sprache: | eng |
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| container_end_page | 1224 |
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| container_issue | 12 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 31 |
| creator | Gorbach, T. Ya Svechnikov, S. V. Smertenko, P. S. Tul’chinskii, P. G. Bondarenko, A. V. Volchek, S. A. Dorofeev, A. M. Masini, G. Maiello, G. La Monica, S. Ferrari, A. |
| description | |
| doi_str_mv | 10.1134/1.1187297 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 1997-12, Vol.31 (12), p.1221-1224 |
| issn | 1063-7826 1090-6479 |
| language | eng |
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| source | SpringerLink Journals |
| title | Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching |
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