Effect of band-gap narrowing on the diffusion of charged impurities in semiconductors
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 1997-11, Vol.31 (11), p.1148 |
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| Sprache: | eng |
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| container_issue | 11 |
| container_start_page | 1148 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 31 |
| creator | Sokolovskiı̆, B. S. |
| description | |
| doi_str_mv | 10.1134/1.1187284 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 1997-11, Vol.31 (11), p.1148 |
| issn | 1063-7826 |
| language | eng |
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| source | SpringerNature Journals |
| title | Effect of band-gap narrowing on the diffusion of charged impurities in semiconductors |
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