Atomic layer deposition of MoNx thin films using a newly synthesized liquid Mo precursor

Molybdenum nitride thin films are deposited using a newly synthesized liquid Mo precursor [MoCl4(THD)(THF)] in an ALD super-cycle process. The new precursor is synthesized using MoCl5 and 2,2,6,6-tetramethyl-3,5-heptanedione, which is a bidentate ligand. The synthesized precursor exists in the liqui...

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Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2022-12, Vol.40 (6)
Hauptverfasser: Kim, Byunguk, Lee, Sangmin, Kang, Taesung, Kim, Sunghoon, Koo, Sangman, Jeon, Hyeongtag
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container_title Journal of vacuum science & technology. A, Vacuum, surfaces, and films
container_volume 40
creator Kim, Byunguk
Lee, Sangmin
Kang, Taesung
Kim, Sunghoon
Koo, Sangman
Jeon, Hyeongtag
description Molybdenum nitride thin films are deposited using a newly synthesized liquid Mo precursor [MoCl4(THD)(THF)] in an ALD super-cycle process. The new precursor is synthesized using MoCl5 and 2,2,6,6-tetramethyl-3,5-heptanedione, which is a bidentate ligand. The synthesized precursor exists in the liquid phase at room temperature and has a characteristic of evaporating 99% at 150–220 °C. Using this new precursor in an ALD super-cycle process results in a pure MoNx thin film with few impurities (C and O). In addition, such MoNx thin films have relatively low resistivity values due to excellent crystallinity and a low impurity concentration. The films' diffusion barrier characteristics confirm that they can perform the role of a barrier at over 600 °C.
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title Atomic layer deposition of MoNx thin films using a newly synthesized liquid Mo precursor
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