Atomic layer deposition of MoNx thin films using a newly synthesized liquid Mo precursor
Molybdenum nitride thin films are deposited using a newly synthesized liquid Mo precursor [MoCl4(THD)(THF)] in an ALD super-cycle process. The new precursor is synthesized using MoCl5 and 2,2,6,6-tetramethyl-3,5-heptanedione, which is a bidentate ligand. The synthesized precursor exists in the liqui...
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Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2022-12, Vol.40 (6) |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Molybdenum nitride thin films are deposited using a newly synthesized liquid Mo precursor [MoCl4(THD)(THF)] in an ALD super-cycle process. The new precursor is synthesized using MoCl5 and 2,2,6,6-tetramethyl-3,5-heptanedione, which is a bidentate ligand. The synthesized precursor exists in the liquid phase at room temperature and has a characteristic of evaporating 99% at 150–220 °C. Using this new precursor in an ALD super-cycle process results in a pure MoNx thin film with few impurities (C and O). In addition, such MoNx thin films have relatively low resistivity values due to excellent crystallinity and a low impurity concentration. The films' diffusion barrier characteristics confirm that they can perform the role of a barrier at over 600 °C. |
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ISSN: | 0734-2101 1520-8559 |
DOI: | 10.1116/6.0002154 |