Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system

Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system

The IBM EL4+mask writer, located in the Advanced Mask Facility in Burlington, Vermont has recently been used to investigate chrome on glass lithography at 75 kV with a current density of 60 A/cm2. One of the main concerns with doing lithography at high beam voltages on a quartz substrate is the effe...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 1999-11, Vol.17 (6), p.2932-2935
Hauptverfasser: Hartley, J. G., Groves, T. R.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 2935
container_issue 6
container_start_page 2932
container_title Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
container_volume 17
creator Hartley, J. G.
Groves, T. R.
description The IBM EL4+mask writer, located in the Advanced Mask Facility in Burlington, Vermont has recently been used to investigate chrome on glass lithography at 75 kV with a current density of 60 A/cm2. One of the main concerns with doing lithography at high beam voltages on a quartz substrate is the effect of beam heating on the resist. Using ZEP7000 resist on both quartz glass and silicon wafer substrates, we have characterized image size control from 0.1 to 3 μm for a large range of pattern geometries.
doi_str_mv 10.1116/1.590928
format Article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1116_1_590928</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1116_1_590928</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-a3aa3d001de2c3ac47accc1163c9ba2251502b553ac2960e2efc1c2213702bfc3</originalsourceid><addsrcrecordid>eNp90MFKw0AQBuBFFIxV8BH2qEjqzm42aY5aqhYrXlS8hclk08Q2SdldWvr2RiK9CJ4GZj5-hp-xSxBjAIhvYaxTkcrJEQtASxFOdJwcs0AkKgolwOcpO3PuSwgRa6UC9jytbNcY3rV8uUbneINuxXe29nW75Oh5ovnqg-9qX3FfGT6_f-GzRXRj1oa87dowN9hwt3feNOfspMS1Mxe_c8TeH2Zv06dw8fo4n94tQpKp8iEqRFUIAYWRpJCiBImo_11RmqOUGrSQudb9SaaxMNKUBCQlqKTfl6RG7GrIJds5Z02ZbWzdoN1nILKfEjLIhhJ6ej1QR7VHX3ftwW47e3DZpij_s39yvwGn42j5</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system</title><source>AIP Journals Complete</source><creator>Hartley, J. G. ; Groves, T. R.</creator><creatorcontrib>Hartley, J. G. ; Groves, T. R.</creatorcontrib><description>The IBM EL4+mask writer, located in the Advanced Mask Facility in Burlington, Vermont has recently been used to investigate chrome on glass lithography at 75 kV with a current density of 60 A/cm2. One of the main concerns with doing lithography at high beam voltages on a quartz substrate is the effect of beam heating on the resist. Using ZEP7000 resist on both quartz glass and silicon wafer substrates, we have characterized image size control from 0.1 to 3 μm for a large range of pattern geometries.</description><identifier>ISSN: 0734-211X</identifier><identifier>ISSN: 1071-1023</identifier><identifier>EISSN: 1520-8567</identifier><identifier>DOI: 10.1116/1.590928</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><ispartof>Journal of Vacuum Science &amp; Technology B: Microelectronics and Nanometer Structures, 1999-11, Vol.17 (6), p.2932-2935</ispartof><rights>American Vacuum Society</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-a3aa3d001de2c3ac47accc1163c9ba2251502b553ac2960e2efc1c2213702bfc3</citedby><cites>FETCH-LOGICAL-c293t-a3aa3d001de2c3ac47accc1163c9ba2251502b553ac2960e2efc1c2213702bfc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,785,786,790,4498,23909,23910,25118,27901,27902</link.rule.ids></links><search><creatorcontrib>Hartley, J. G.</creatorcontrib><creatorcontrib>Groves, T. R.</creatorcontrib><title>Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system</title><title>Journal of Vacuum Science &amp; Technology B: Microelectronics and Nanometer Structures</title><description>The IBM EL4+mask writer, located in the Advanced Mask Facility in Burlington, Vermont has recently been used to investigate chrome on glass lithography at 75 kV with a current density of 60 A/cm2. One of the main concerns with doing lithography at high beam voltages on a quartz substrate is the effect of beam heating on the resist. Using ZEP7000 resist on both quartz glass and silicon wafer substrates, we have characterized image size control from 0.1 to 3 μm for a large range of pattern geometries.</description><issn>0734-211X</issn><issn>1071-1023</issn><issn>1520-8567</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNp90MFKw0AQBuBFFIxV8BH2qEjqzm42aY5aqhYrXlS8hclk08Q2SdldWvr2RiK9CJ4GZj5-hp-xSxBjAIhvYaxTkcrJEQtASxFOdJwcs0AkKgolwOcpO3PuSwgRa6UC9jytbNcY3rV8uUbneINuxXe29nW75Oh5ovnqg-9qX3FfGT6_f-GzRXRj1oa87dowN9hwt3feNOfspMS1Mxe_c8TeH2Zv06dw8fo4n94tQpKp8iEqRFUIAYWRpJCiBImo_11RmqOUGrSQudb9SaaxMNKUBCQlqKTfl6RG7GrIJds5Z02ZbWzdoN1nILKfEjLIhhJ6ej1QR7VHX3ftwW47e3DZpij_s39yvwGn42j5</recordid><startdate>19991101</startdate><enddate>19991101</enddate><creator>Hartley, J. G.</creator><creator>Groves, T. R.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19991101</creationdate><title>Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system</title><author>Hartley, J. G. ; Groves, T. R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-a3aa3d001de2c3ac47accc1163c9ba2251502b553ac2960e2efc1c2213702bfc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Hartley, J. G.</creatorcontrib><creatorcontrib>Groves, T. R.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of Vacuum Science &amp; Technology B: Microelectronics and Nanometer Structures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hartley, J. G.</au><au>Groves, T. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system</atitle><jtitle>Journal of Vacuum Science &amp; Technology B: Microelectronics and Nanometer Structures</jtitle><date>1999-11-01</date><risdate>1999</risdate><volume>17</volume><issue>6</issue><spage>2932</spage><epage>2935</epage><pages>2932-2935</pages><issn>0734-211X</issn><issn>1071-1023</issn><eissn>1520-8567</eissn><coden>JVTBD9</coden><abstract>The IBM EL4+mask writer, located in the Advanced Mask Facility in Burlington, Vermont has recently been used to investigate chrome on glass lithography at 75 kV with a current density of 60 A/cm2. One of the main concerns with doing lithography at high beam voltages on a quartz substrate is the effect of beam heating on the resist. Using ZEP7000 resist on both quartz glass and silicon wafer substrates, we have characterized image size control from 0.1 to 3 μm for a large range of pattern geometries.</abstract><doi>10.1116/1.590928</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0734-211X
ispartof Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999-11, Vol.17 (6), p.2932-2935
issn 0734-211X
1071-1023
1520-8567
language eng
recordid cdi_crossref_primary_10_1116_1_590928
source AIP Journals Complete
title Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T20%3A34%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Chrome%20on%20glass%20mask%20writing%20at%2075%20kV%20with%20the%20IBM%20EL4+electron-beam%20system&rft.jtitle=Journal%20of%20Vacuum%20Science%20&%20Technology%20B:%20Microelectronics%20and%20Nanometer%20Structures&rft.au=Hartley,%20J.%20G.&rft.date=1999-11-01&rft.volume=17&rft.issue=6&rft.spage=2932&rft.epage=2935&rft.pages=2932-2935&rft.issn=0734-211X&rft.eissn=1520-8567&rft.coden=JVTBD9&rft_id=info:doi/10.1116/1.590928&rft_dat=%3Cscitation_cross%3Escitation_primary_10_1116_1_590928%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true