Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system
The IBM EL4+mask writer, located in the Advanced Mask Facility in Burlington, Vermont has recently been used to investigate chrome on glass lithography at 75 kV with a current density of 60 A/cm2. One of the main concerns with doing lithography at high beam voltages on a quartz substrate is the effe...
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Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 1999-11, Vol.17 (6), p.2932-2935 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The IBM EL4+mask writer, located in the Advanced Mask Facility in Burlington, Vermont has recently been used to investigate chrome on glass lithography at 75 kV with a current density of 60 A/cm2. One of the main concerns with doing lithography at high beam voltages on a quartz substrate is the effect of beam heating on the resist. Using ZEP7000 resist on both quartz glass and silicon wafer substrates, we have characterized image size control from 0.1 to 3 μm for a large range of pattern geometries. |
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ISSN: | 0734-211X 1071-1023 1520-8567 |
DOI: | 10.1116/1.590928 |