Heterogeneous recombination of atomic bromine and fluorine

Recombination coefficients (γ) of Br and F atoms have been measured for crystalline Si, quartz, photoresist, anodized aluminum, poly-Si, WSi x , tungsten and stainless steel surfaces for a range of temperatures. The γ Br and γ F values are compared to our previously reported measurements of γ Cl [G....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 1999-01, Vol.17 (1), p.282-290
Hauptverfasser: Kota, Gowri P., Coburn, J. W., Graves, David B.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Recombination coefficients (γ) of Br and F atoms have been measured for crystalline Si, quartz, photoresist, anodized aluminum, poly-Si, WSi x , tungsten and stainless steel surfaces for a range of temperatures. The γ Br and γ F values are compared to our previously reported measurements of γ Cl [G. P. Kota, J. W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A 16, 270 (1998)]. In general, the Br-, Cl- and F-atom recombination coefficients decrease as the surface temperature increases. The γ Br values are similar to the γ Cl values for the various surfaces. At room temperature, γ Br is highest (>0.4) for stainless steel and tungsten, moderate (0.1–0.4) for poly-Si, WSi x and anodized Al, and lowest (
ISSN:0734-2101
1520-8559
DOI:10.1116/1.581582