Heterogeneous recombination of atomic bromine and fluorine
Recombination coefficients (γ) of Br and F atoms have been measured for crystalline Si, quartz, photoresist, anodized aluminum, poly-Si, WSi x , tungsten and stainless steel surfaces for a range of temperatures. The γ Br and γ F values are compared to our previously reported measurements of γ Cl [G....
Gespeichert in:
Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 1999-01, Vol.17 (1), p.282-290 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Recombination coefficients (γ) of Br and F atoms have been measured for crystalline Si, quartz, photoresist, anodized aluminum, poly-Si,
WSi
x
,
tungsten and stainless steel surfaces for a range of temperatures. The
γ
Br
and
γ
F
values are compared to our previously reported measurements of
γ
Cl
[G. P. Kota, J. W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A 16, 270 (1998)]. In general, the Br-, Cl- and F-atom recombination coefficients decrease as the surface temperature increases. The
γ
Br
values are similar to the
γ
Cl
values for the various surfaces. At room temperature,
γ
Br
is highest (>0.4) for stainless steel and tungsten, moderate (0.1–0.4) for poly-Si,
WSi
x
and anodized Al, and lowest ( |
---|---|
ISSN: | 0734-2101 1520-8559 |
DOI: | 10.1116/1.581582 |