Field emission scanning probe lithography with GaN nanowires on active cantilevers

Field emission scanning probe lithography (FE-SPL) is based on the exposure of a resist covered substrate with low energy electrons emitted from an ultra-sharp tip placed in close vicinity to a sample. GaN nanowires (NWs) present high mechanical stability, suitable geometry for FE-SPL, and controllable electrical properties achieved by adjusting dopant concentration. Here, the authors will present long time exposure results performed using GaN NWs tips, mounted on active scanning probes, working as field electron emitters. Using GaN NW tips, features down to the sub-10 nm were achieved in the FE-SPL process. A systematic study of the field emission current stability, exposure reproducibility, and results on exemplary high-resolution exposure and nanostructure imaging done with the same GaN tips will also be presented.