Atomic deuteration of epitaxial many-layer graphene on 4H-SiC(0001¯)

From studies of single-layer graphene, the authors find that atomic deuteration indeed does lead to reversible chemisorption. However, they find that atomic deuterium treatment of many-layer epitaxially grown graphene on C-face 4H-SiC only affects the surface graphene layer and the buried graphene/S...

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Veröffentlicht in:	Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2019-07, Vol.37 (4)
Hauptverfasser:	Mazza, Alessandro R., Miettinen, Anna, Conrad, Matt, Charlton, Timothy R., He, Xiaoqing, Guha, Suchi, Bian, Guang, Lin, Jian, Conrad, Edward H., Miceli, Paul F.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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