Atomic deuteration of epitaxial many-layer graphene on 4H-SiC(0001¯)

From studies of single-layer graphene, the authors find that atomic deuteration indeed does lead to reversible chemisorption. However, they find that atomic deuterium treatment of many-layer epitaxially grown graphene on C-face 4H-SiC only affects the surface graphene layer and the buried graphene/S...

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Veröffentlicht in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2019-07, Vol.37 (4)
Hauptverfasser: Mazza, Alessandro R., Miettinen, Anna, Conrad, Matt, Charlton, Timothy R., He, Xiaoqing, Guha, Suchi, Bian, Guang, Lin, Jian, Conrad, Edward H., Miceli, Paul F.
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Sprache:eng
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Zusammenfassung:From studies of single-layer graphene, the authors find that atomic deuteration indeed does lead to reversible chemisorption. However, they find that atomic deuterium treatment of many-layer epitaxially grown graphene on C-face 4H-SiC only affects the surface graphene layer and the buried graphene/SiC interface. Raman and x-ray diffraction experiments reveal that only a small portion of the graphene is affected, showing no interlayer incorporation of deuterium. However, x-ray reflectivity and cross-sectional transmission electron microscopy demonstrate a change of the buried graphene/SiC interface, which resembles a delamination of graphene from the substrate. In some cases, multiple atomic treatments lead to complete delamination of the graphene film.
ISSN:2166-2746
2166-2754
DOI:10.1116/1.5095961