Atomic deuteration of epitaxial many-layer graphene on 4H-SiC(0001¯)
From studies of single-layer graphene, the authors find that atomic deuteration indeed does lead to reversible chemisorption. However, they find that atomic deuterium treatment of many-layer epitaxially grown graphene on C-face 4H-SiC only affects the surface graphene layer and the buried graphene/S...
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Veröffentlicht in: | Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2019-07, Vol.37 (4) |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | From studies of single-layer graphene, the authors find that atomic deuteration indeed does lead to reversible chemisorption. However, they find that atomic deuterium treatment of many-layer epitaxially grown graphene on C-face 4H-SiC only affects the surface graphene layer and the buried graphene/SiC interface. Raman and x-ray diffraction experiments reveal that only a small portion of the graphene is affected, showing no interlayer incorporation of deuterium. However, x-ray reflectivity and cross-sectional transmission electron microscopy demonstrate a change of the buried graphene/SiC interface, which resembles a delamination of graphene from the substrate. In some cases, multiple atomic treatments lead to complete delamination of the graphene film. |
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ISSN: | 2166-2746 2166-2754 |
DOI: | 10.1116/1.5095961 |