High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved Vth stability
Metal–insulator–semiconductor (MIS) capacitor structures were fabricated on AlGaN/GaN two-dimensional electron gas heterostructure material in order to investigate important aspects of the gate module of a corresponding MIS-high electron mobility transistor device. The process sequence started with...
Gespeichert in:
Veröffentlicht in: | Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2017-01, Vol.35 (1) |
---|---|
Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Metal–insulator–semiconductor (MIS) capacitor structures were fabricated on AlGaN/GaN
two-dimensional electron
gas
heterostructure
material in order to investigate important aspects of the gate module of a corresponding
MIS-high electron mobility transistor device. The process sequence started with an initial wet
chemical surface treatment of the as-grown semiconductor material followed by an
atomic layer
deposition of Al2O3 (high-k first). The electrical
analysis focused on the gate leakage current as well as on the shift of the threshold voltage
(Vth) upon bias stress in the off- and the on-state regions. The high-k first
samples showed much better Vth stability compared to lithographically processed
samples, in which the high-k deposition was performed after ohmic contact formation and
just before the gate electrode metallization. These results reflect a superior quality of
the high-k/GaN interface for the processed structures according to the high-k first
approach. |
---|---|
ISSN: | 2166-2746 2166-2754 |
DOI: | 10.1116/1.4967307 |