Correlation between dry etching resistance of Ta masks and the oxidation states of the surface oxide layers
Mechanisms of dry etching resistance of Ta masks, which are widely used for magnetic random access memory etching processes, have been investigated for a better understanding of their faceting characteristics. In magnetic-material etching processes by CO/NH3 or CH3OH plasmas, CO+ ion is considered a...
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Veröffentlicht in: | Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2015-09, Vol.33 (5) |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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