Correlation between dry etching resistance of Ta masks and the oxidation states of the surface oxide layers

Mechanisms of dry etching resistance of Ta masks, which are widely used for magnetic random access memory etching processes, have been investigated for a better understanding of their faceting characteristics. In magnetic-material etching processes by CO/NH3 or CH3OH plasmas, CO+ ion is considered a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2015-09, Vol.33 (5)
Hauptverfasser: Satake, Makoto, Yamada, Masaki, Li, Hu, Karahashi, Kazuhiro, Hamaguchi, Satoshi
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!