Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
In this work, HfO2/La2O3 nanolaminate films were deposited on Si substrates by plasma enhanced atomic layer deposition with in situ plasma treatment. Different annealing treatments were adopted to change films structure and performance. The upper HfO2 layers in HfO2/La2O3 nanolaminates were easily c...
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Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2015-01, Vol.33 (1) |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | In this work, HfO2/La2O3 nanolaminate films were deposited on Si substrates by plasma enhanced atomic layer deposition with in situ plasma treatment. Different annealing treatments were adopted to change films structure and performance. The upper HfO2 layers in HfO2/La2O3 nanolaminates were easily crystallized after annealing at 800 °C, while all the La2O3 layers kept amorphous. X-ray photoelectron spectroscopy results indicated that LaO(OH) and La(OH)3 peaks became weak, H2O molecules in laminates evaporated during high-temperature annealing. Band diagram analysis showed that valence band offset and band gap widened after 800 °C annealing. Annealing, especially 800 °C annealing, had gentle effect on leakage current, but could obviously change capacitance and permittivity due to tetragonal and cubic phase formed in the HfO2 film. |
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ISSN: | 0734-2101 1520-8559 |
DOI: | 10.1116/1.4900935 |