Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers

The SiC/SiO2 interface is generally considered to be the cause for the reduced electron mobility of SiC power devices. Previous studies have shown a correlation between the mobility and the transition layer width at the SiC/SiO2 interface. The authors investigated this interface with atomic resoluti...

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Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2014-11, Vol.32 (6)
Hauptverfasser: Liu, Peizhi, Li, Guoliang, Duscher, Gerd, Sharma, Yogesh K., Ahyi, Ayayi C., Isaacs-Smith, Tamara, Williams, John R., Dhar, Sarit
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Sprache:eng
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Zusammenfassung:The SiC/SiO2 interface is generally considered to be the cause for the reduced electron mobility of SiC power devices. Previous studies have shown a correlation between the mobility and the transition layer width at the SiC/SiO2 interface. The authors investigated this interface with atomic resolution Z-contrast imaging and electron energy-loss spectroscopy, and discovered that this transition region was due to the roughness of the vicinal interface. The roughness of a vicinal interface consisted of atomic steps and facets deviating from the ideal off-axis cut plane. The authors conclude that this roughness is limiting the mobility in the channels of SiC MOSFETs.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.4897377