Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

The growth of N-polar (In,Ga)N structures by plasma-assisted molecular beam epitaxy is studied. (In,Ga)N multiple quantum well samples with atomically smooth surface were grown and their good structural quality was confirmed by x-ray diffraction, scanning transmission electron microscopy, and defect...

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Veröffentlicht in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2013-05, Vol.31 (3)
Hauptverfasser: Chèze, Caroline, Siekacz, Marcin, Muzioł, Grzegorz, Turski, Henryk, Grzanka, Szymon, Kryśko, Marcin, Weyher, Jan L., Boćkowski, Michał, Hauswald, Christian, Lähnemann, Jonas, Brandt, Oliver, Albrecht, Martin, Skierbiszewski, Czesław
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Sprache:eng
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Zusammenfassung:The growth of N-polar (In,Ga)N structures by plasma-assisted molecular beam epitaxy is studied. (In,Ga)N multiple quantum well samples with atomically smooth surface were grown and their good structural quality was confirmed by x-ray diffraction, scanning transmission electron microscopy, and defect selective etching. The In incorporation was higher in the N-polar than in the Ga-polar oriented crystal, consistent with previous reports. However, despite the good morphological and structural properties of these samples, no photoluminescence signal from the (In,Ga)N wells was detected. In contrast, a thick N-polar (In,Ga)N layer exhibited a broad peak at 620 nm in good agreement with the In content determined by x-ray diffraction. The potential source of the luminescence quenching in the N-polar (In,Ga)N multiple quantum wells is discussed and attributed either to a strong nonradiative recombination channel at the surface promoted by the electric field or to the high concentration of point defects at the interfaces of the quantum well structures.
ISSN:2166-2746
1520-8567
2166-2754
DOI:10.1116/1.4802964