Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells
The growth of N-polar (In,Ga)N structures by plasma-assisted molecular beam epitaxy is studied. (In,Ga)N multiple quantum well samples with atomically smooth surface were grown and their good structural quality was confirmed by x-ray diffraction, scanning transmission electron microscopy, and defect...
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Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2013-05, Vol.31 (3) |
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Hauptverfasser: | , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The growth of N-polar (In,Ga)N structures by plasma-assisted molecular beam epitaxy is studied. (In,Ga)N multiple quantum well samples with atomically smooth surface were grown and their good structural quality was confirmed by x-ray diffraction, scanning transmission electron microscopy, and defect selective etching. The In incorporation was higher in the N-polar than in the Ga-polar oriented crystal, consistent with previous reports. However, despite the good morphological and structural properties of these samples, no photoluminescence signal from the (In,Ga)N wells was detected. In contrast, a thick N-polar (In,Ga)N layer exhibited a broad peak at 620 nm in good agreement with the In content determined by x-ray diffraction. The potential source of the luminescence quenching in the N-polar (In,Ga)N multiple quantum wells is discussed and attributed either to a strong nonradiative recombination channel at the surface promoted by the electric field or to the high concentration of point defects at the interfaces of the quantum well structures. |
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ISSN: | 2166-2746 1520-8567 2166-2754 |
DOI: | 10.1116/1.4802964 |