Electron-beam-induced deposition of 3-nm-half-pitch patterns on bulk Si

This paper demonstrates electron-beam-induced deposition of few-nm-width dense features on bulk samples by using a scanning electron-beam lithography system. To optimize the resultant features, three steps were taken: (1) features were exposed in a repetitive sequence, so as to build up the deposite...

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Veröffentlicht in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2011-11, Vol.29 (6), p.06F305-06F305-6
Hauptverfasser: van Oven, J. C., Berwald, F., Berggren, K. K., Kruit, P., Hagen, C. W.
Format: Artikel
Sprache:eng
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Zusammenfassung:This paper demonstrates electron-beam-induced deposition of few-nm-width dense features on bulk samples by using a scanning electron-beam lithography system. To optimize the resultant features, three steps were taken: (1) features were exposed in a repetitive sequence, so as to build up the deposited features gradually across the entire pattern, and thus avoid proximity effects; (2) an additional delay was added between exposures to permit diffusion of reactants into the exposed area; and (3) the exposures were phase-synchronized to the dominant noise source (the 50-Hz line voltage) to minimize the effect of noise. The reasons these steps led to significant improvements in patterning resolution are discussed.
ISSN:1071-1023
2166-2746
1520-8567
2166-2754
DOI:10.1116/1.3640743