Study of molecular beam epitaxially grown InGaAsSbN/GaSb single quantum wells

InGaAsSbN quantum wells (QWs) have been investigated for potential light-emitting devices in the midinfrared region. This paper presents the growth and properties of molecular beam epitaxially grown InGaAsSbN single QWs using a variety of characterization techniques. A 10 K photoluminescence emission at 2.27 μ m , with a lowest full width at half maxima of 5 meV which shifted to 2.30 μ m on in situ annealing, has been observed. The presence of well resolved Pendellosung fringes in high resolution x-ray diffraction and sharp abrupt interfaces in the corresponding transmission electron microscope (TEM) images are indications of the high quality of these QWs. Raman spectroscopy studies reveal the presence of well resolved Raman peaks with higher intensity, along with the presence of sharp second order modes of GaSb, further attesting to the high quality of the QW structures grown. Investigation of the annealed samples using Z -contrast scanning TEM images reveals atomic interdiffusion between the QW and surrounding GaSb layers, increasing the effective thickness of the QW, which explains the redshift upon annealing.