Charge retention phenomena in CT silicon nitride: Impact of technology and operating conditions

The aim of this work is to understand charge loss mechanisms in TANOS stack for which charge retention is monitored just after programming in an almost continuous way and voltage is applied during retention experiments in order to obtain zero electric field either on alumina or tunnel oxide. The cha...

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Veröffentlicht in:	Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2011-01, Vol.29 (1), p.1
Hauptverfasser:	Ghidini, G., Galbiati, N., Mascellino, E., Scozzari, C., Sebastiani, A., Amoroso, S., Compagnoni, C. Monzio, Spinelli, A. S., Maconi, A., Piagge, R., Del Vitto, A., Alessandri, M., Baldi, I., Moltrasio, E., Albini, G., Grossi, A., Tessariol, P., Camerlenghi, E., Mauri, A.
Format:	Artikel
Sprache:	eng
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